c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2012 www. ruichips . com ru 4 0 1 5 0 s n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 40 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 1 5 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 60 0 a i d continuous drain current ( v gs =10v) t c =25 c 1 5 0 a t c =100 c 108 p d maximum power dissipation t c =25 c 188 w t c = 100 c 94 w r q jc thermal resistance - junction to case 0.8 c /w drain - source a valanche ratings e as avalanche energy, single pulsed 400 m j ? 40 v/ 1 5 0 a, r ds ( on ) = 3 m ( t y p .)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? dc - dc converters and off - line ups absolute maximum ratings n - channel mosfe t to - 263
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 2 www. ruichips .com ru 401 5 0 s electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 4 0 1 5 0 s unit min. typ. max. static characteristics bv dss drain - s ource breakdown voltage v gs =0v, i ds =250 m a 40 v i dss zero gate voltage drain current v ds = 4 0 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 75 a 3 4 m w notes : calculated continuous current based on maximum allowable junction temperature . limited by bonding wire. pulse width limited by safe operating area. limited by t jmax , i as = 40 a, v dd = 32 v, r g = 47 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 75 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 75 a, dl sd /dt=100a/ m s 45 ns q rr reverse recovery charge 9 0 nc dynamic character istics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.8 w c iss input capacitance v gs =0v, v ds = 20 v, frequency=1.0mhz 3 870 pf c oss output capacitance 6 80 c rss reverse transfer capacitance 3 6 3 t d ( on ) turn - on delay time v dd = 2 0 v, r l = 30 w , i ds = 75 a, v gen = 10v, r g = 4.7 w 3 5 ns t r turn - on rise time 1 0 6 t d ( off ) turn - off delay time 8 4 t f turn - off fall time 4 6 gate charge characteristics q g total gate charge v ds = 32 v, v gs = 10v, i ds = 75 a 95 nc q gs gate - source charge 20 q gd gate - drain charge 30
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 3 www. ruichips .com ru 401 5 0 s typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - j unction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) squa re wave pulse duration ( sec)
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 4 www. ruichips .com ru 401 5 0 s typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 5 www. ruichips .com ru 401 5 0 s typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temp erature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 6 www. ruichips .com ru 401 5 0 s avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 7 www. ruichips .com ru 401 5 0 s ordering and marking information device marking package packaging quantity reel size tape width ru 40150s RU40150S to - 263 tube 50 - -
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 8 www. ruichips .com ru 401 5 0 s package information to - 263 - 2l all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 l 2.00 2.30 2.60 0.079 0.090 0.102 a1 0 0.10 0.25 0 0.004 0.010 l3 1.17 1.27 1.40 0.046 0.050 0.055 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 l4 0.25bsc 0.01bsc b1 1.23 - 1.36 0.048 - 0.052 l 2 2.50ref. 0.098ref. c 0.34 - 0.47 0.013 - 0.019 0 - 8 0 - 8 c1 1.22 - 1. 32 0.048 - 0.052 1 5 7 9 5 7 9 d 8.60 8.70 8.80 0.338 0.343 0.346 2 1 3 5 1 3 5 e 10.00 10.16 10.26 0.394 0.4 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p1 1.40 1.50 1.60 0.055 0.059 0.063 h 14.70 15.10 15.50 0.579 0.594 0.610
c opyright ruichips semiconduc tor co . , ltd rev . a C sep ., 2012 9 www. ruichips .com ru 401 5 0 s customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruich ips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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